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si4882dy vishay siliconix new product document number: 70878 s-00271erev. a, 26-apr-99 www.vishay.com faxback 408-970-5600 2-1 n-channel reduced q g , fast switching mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.0105 @ v gs = 10 v 11 30 0.0205 @ v gs = 4.5 v 8 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet dd g s d d s s
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 25 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 11 a continuous drain current (t j = 150 c) a , b t a = 70 c i d 9 a pulsed drain current i dm 50 a continuous source current (diode conduction) a, b i s 2.3 maximum power dissipation a, b t a = 25 c p d 2.5 w maximum power dissipation a , b t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol typical maximum unit maximum junction - to - ambient (mosfet) a t 10 sec r thja 35 50 c/w m ax i mum j unc ti on- t o- a m bi en t (mosfet) a steady state r thja 68 80 c/w maximum junction-to-foot st ea d y st a t e r thjf 19 25 notes a. surface mounted on fr4 board. b. t 10 sec.
si4882dy vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 70878 s-00271erev. a, 26-apr-99

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 11 a 0.0087 0.0105 drain - source on - state resistance a r ds( on ) v gs = 4.5 v, i d = 8 a 0.017 0.0205 forward transconductance a g fs v ds = 15 v, i d = 11 a 26 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.70 1.1 v dynamic b total gate charge q g v15vv50vi11a 13.5 17 c gate-source charge q gs v ds = 15 v, v gs = 5.0 v, i d = 11 a 3.9 nc gate-drain charge q gd 6.0 turn-on delay time t d(on) v15vr15 13 20 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 8 12 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 45 68 ns fall time t f 19 30 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 40 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

0 10 20 30 40 50 012345 0 10 20 30 40 50 0246810 v gs = 10 thru 5 v t c = 125 c 55 c 4 v 25 c output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d 3 v
si4882dy vishay siliconix new product document number: 70878 s-00271erev. a, 26-apr-99 www.vishay.com faxback 408-970-5600 2-3
on-resistance ( r ds(on) ) 0 400 800 1200 1600 2000 0 6 12 18 24 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 6 12 18 24 30 0 0.005 0.010 0.015 0.020 0.025 0.030 0 1020304050 v ds drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 11 a i d drain current (a) v gs = 10 v i d = 11 a v gs = 10 v v gs = 4.5 v gate charge on-resistance vs. drain current gate-to-source voltage (v) q g total gate charge (nc) c capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.02 0.04 0.06 0.08 0.10 0246810 t j = 150 c t j = 25 c i d = 11 a 50 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s
si4882dy vishay siliconix new product www.vishay.com faxback 408-970-5600 2-4 document number: 70878 s-00271erev. a, 26-apr-99
10 3 10 2 1 10 600 10 1 10 4 100 0.01 0 1 50 60 20 30 10 30 0.1 single pulse power time (sec) 10 40 power (w) 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 50 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 3 10 2 110 10 1 10 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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